J. Am. Chem. Soc., ASAP Article - Mechanism of Growth of the Ge Wetting Layer Upon Exposure of Si(100)-2 × 1 to GeH4
Chie-Sheng Liu, Li-Wei Chou, Lu-Sheng Hong,* and Jyh-Chiang Jiang*Department of Chemical Engineering, National Taiwan University of Science and Technology, 43, Keelung Road, Section 4, Taipei, 106, Taiwan
[email]hongls@mail.ntust.edu.tw[/email]; [email]jcjiang@mail.ntust.edu.tw[/email]
Received December 4, 2007
Abstract:
This paper describes the initial reaction kinetics of Ge deposition after exposure of Si(100)-2 × 1 to GeH4 in a UHV-CVD system. The rate of Ge growth, especially at the wetting layer stage, was investigated using in situ X-ray photoelectron spectroscopy to measure the Ge signal at the onset of deposition. A kinetic analysis of the initial growth of the Ge wetting layer at temperatures ranging from 698 to 823 K revealed an activation energy of 30.7 kcal/mol. Density functional theory calculations suggested that opening of the Si dimer—with a closely matching energy barrier of 29.7 kcal/mol, following hydrogen atom migration—was the rate controlling step for the incorporation of a GeH2 unit into the lattice to complete the growth of the Ge wetting layer after dissociative adsorption of GeH4.
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[url]http://pubs.acs.org/cgi-bin/abstract.cgi/jacsat/asap/abs/ja710802s.html[/url]
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