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Title:
Semiconductor-Laser Fundamentals: Physics of the Gain Materials |
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Division: General Materials / Springer / 英文版 |
Author/Editor: Chow, Weng W., Koch, Stephan W. Star:  |
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ISBN: 3540641661 |
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Introduce Date: 2007年05月31日21:33 , Release Date: 2007年05月31日21:39 |
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Introducer: zhusiwei , Rate: 0/99 |
| Format: djvu Download |
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| Description: |
Semiconductor-Laser Fundamentals
Physics of the Gain Materials
Chow, Weng W., Koch, Stephan W.
1999, X, 246 p., 132 illus., Hardcover
ISBN: 978-3-540-64166-7
About this textbook
This book presents an in-depth discussion of the semiconductor-laser gain medium. The optical and electronic properties of semiconductors, particularly semiconductor quantum-well systems, are analyzed in detail, covering a wide variety of near-infrared systems with or without strain, as well as wide-gap materials such as the group-III nitride compounds or the II-VI materials. The important bandstructure modifications and Coulomb interaction effects are discussed, including the solution of the longstanding semiconductor laser lineshape problem. Quantitative comparisons between measured and predicted gain/absorption and refractive index spectra for a wide variety of semiconductor-laser materials enable the theoretical results to be used directly in the engineering of advanced laser and amplifier structures. A wealth of examples for many different material combinations bestow the book with quantitative and predictive value for a wide variety of applications.
Written for:
Students, scientists
Table of contents
1. Basic Concepts 1
1.1 Historical Background 1
1.2 Laser Device 3
1.3 Heterostructures 6
1.4 Elementary Aspects of Band Structures 10
1.5 Units 15
1.6 Fermi-Dirac Distributions 16
1.7 Quantum Confinement 21
1.8 Slowly-Varying Maxwell Equations 25
1.9 Quantum Mechanics of the Semiconductor Medium 28
2. Free-Carrier Theory 36
2.1 Free-Carrier Equations of Motion 37
2.2 Quasi-Equilibrium Approximation 45
2.3 Semiconductor Gain 49
2.4 Temperature Dependence of Gain 58
2.5 Gain Saturation 62
2.6 Carrier Induced Refractive Index 65
2.7 Linewidth Enhancement or Antiguiding Factor 69
3. Coulomb Effects 72
3.1 Semiconductor Bloch Equations 75
3.2 Interband Coulomb Effects 80
3.3 Screened Hartree-Fock Approximation 83
3.4 Bandgap Renormalization
in the Screened Hartree-Fock Approximation 88
3.5 Padé Approximation 90
3.6 Bulk Semiconductors 92
3.7 Quantum-Wells 98
4. Correlation Effects 107
4.1 Coulomb Correlation Effects 108
4.2 Carrier Quantum Boltzmann Equation 111
4.3 Dephasing and Screening 116
4.4 Formulation of Numerical Problem 117
4.4.1 Quantum-Wells 119
4.4.2 Bulk-Material 143
4.5 Carrier-Phonon Scattering 145
4.6 Characteristic Relaxation Times 147
5. Bulk Band Structures 150
5.1 Bloch Theorem 150
5.2 Electronic States at k=0 151
5.3 k·p Theory 155
5.4 Conduction Bands 156
5.5 Valence Bands 157
5.6 Luttinger Hamiltonian 159
6. Quantum Wells 166
6.1 Envelope Approximation Method 166
6.2 Band Mixing 170
6.3 Strained Quantum Wells 175
6.4 Dipole Matrix Elements 181
6.5 6×6 Luttinger Hamiltonian 185
6.6 Wurtzite Crystal 188
7. Applications 196
7.1 GaAsAlGaAs Quantum Wells 196
7.2 InGaAsAlGaAs Strained Quantum Wells 204
7.3 InGaAsInP 210
7.4 InGaPInAlGaP Red-Wavelength Lasers 213
7.5 IIVI Wide-Bandgap Systems 218
7.6 Group-III Nitrides 224
References 235
Index 241
END
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