Steady-state and impedance study of n-GaAs in H2SO4 solution: Mechanism analysis
分类信息 - Paper认证
| 姓名 |
Yin Huang |
| 所在学校或单位 |
University of Alberta, Canada |
| 文章题目 |
Steady-state and impedance study of n-GaAs in H2SO4 solution: Mechanism analysis |
| 期刊名 |
Thin Solid Films |
| 年份，卷（期），起止页码 |
496 (2006) 724 – 734 |
| 影响因子 |
1.666 |
| 文章链接 |
http://dx.doi.org/10.1016/j.tsf.2005.09.003 |
Abstract
In this paper, a study on the electrochemical impedance of anodic decomposition of n-GaAs in 0.5 M sulfuric acid, combined with steady-state polarization techniques, is presented. Both dark and daylight conditions have been investigated for comparison of their influence on polarization curves and impedance by hole injection in a potential range from open circuit to breakdown. An inductive loop appears if a high enough positive potential is applied for both conditions, while recombination resistance is only observed for the daylight case. Quantitative simulation of the impedance spectra suggests that the rate-determining step for corrosion/photocorrosion is the generation of mobile intermediates, e.g., AsGa+, which are then replaced by competition between a Faradaic process involving immobile intermediate formation and a parallel chemical step to form AsGa–OH.
Keywords: Gallium arsenide; Corrosion mechanism; Impedance; Inductive loop
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